AV3906 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV3906
TO-92 Plastic-Encapsulate Transistors
AV3906 TRANSISTOR（ PNP ）
FEATURES
Power dissipation
P_CM : 0.625 W（Tamb=25℃）
Collector current
I_CM : -0.2 A
Collector-base voltage
V_(BR)CBO : -40 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3. COLLECTOR
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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= -100 μA ， I_E=0
-40
V
Collector-emitter breakdown voltage V(BR)_CEO I_C= -1 mA , I_B=0
-40
Emitter-base breakdown voltage
V(BR)_EBO
I_E= -100 μA， I_C=0
-5
Collector cut-off current
I_CBO
V_CB= -40 V , I_E=0
Collector cut-off current
I_CEo
V_CB= -40 V , I_B=0
Emitter cut-off current
I_EBO
V_EB= -5 V , I_C=0
DC current gain
H_FE（₁）
H_FE（₂）
V_CE= -1 V , I_C= -10 mA 100
V_CE= -1 V , I_C=-50 mA
60
V
V
-0.1 μA
-0.1 μA
-0.1 μA
300
Collector-emitter saturation voltage V_CE(sat)
I_C= -50 mA, I_B= -5mA
-0.4 V
Base-emitter saturation voltage
V_BE(sat)
I_C= -50mA, I_B= -5 mA
-0.95 V
Transition frequency
V_CE= -20 V, I_C= -10 mA
f_T
250
f =100 MHz
MHz
CLASSIFICATION OF HFE₍₁₎
Rank
Range
O
100-200
Y
200-300
G
300-400
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