AV3904 Datasheet, PDF (1/2 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV3904
TO-92 Plastic-Encapsulate Transistors
AV3904 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P_CM : 0.625 W（Tamb=25℃）
Collector current
I_CM : 0.2 A
Collector-base voltage
V_(BR)CBO : 60 V
Operating and storage junction temperature range
T_J，T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3. COLLECTOR
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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
V(BR)_CBO Ic= 100 μA ， I_E=0
60
V
Collector-emitter breakdown voltage V(BR)_CEO
Emitter-base breakdown voltage
V(BR)_EBO
Collector cut-off current
I_CBO
Collector cut-off current
I_CEo
Emitter cut-off current
I_EBO
DC current gain
H_FE（₁）
H_FE（₂）
I_C= 1 mA , I_B=0
I_E= 100 μA， I_C=0
V_CB= 60 V , I_E=0
V_CB= 40 V , I_B=0
V_EB= 5 V , I_C=0
V_CE= 1 V , I_C= 10 mA
V_CE= 1 V , I_C=50 mA
40
V
6
V
0.1 μA
0.1 μA
0.1 μA
100
300
60
Collector-emitter saturation voltage V_CE(sat)
I_C= 50 mA, I_B= 5mA
0.4 V
Base-emitter saturation voltage
V_BE(sat)
I_C= 50mA, I_B= 5 mA
0.95 V
Transition frequency
V_CE= 20 V, I_C= 10 mA
f_T
250
f =100 MHz
MHz
CLASSIFICATION OF HFE₍₁₎
Rank
Range
O
100-200
Y
200-300
G
300-400
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