AV2222 Datasheet, PDF (1/5 Pages) Avic Technology – Amplifier Transistors PN Silicon

@vic
AV2222
Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
2N2222
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40
Vdc
75
Vdc
6.5
Vdc
600
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1
2
3
TO–92
Symbol
Min
Max
V(BR)CEO
40
—
V(BR)CBO
75
—
V(BR)EBO
6.0
—
ICEX
—
10
ICBO
—
0.01
—
10
IEBO
—
10
ICEO
—
10
IBEX
—
20
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc
Copyright @vic Electronics Corp.
1
Website: http://www.avictek.com