AV1959 Datasheet, PDF (1/3 Pages) Avic Technology – TO-92 Plastic-Encapsulate Transistors

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AV1959
TO-92 Plastic-Encapsulate Transistors
AV1959 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
P_CM : 0.5 W（Tamb=25℃）
Collector current
I_CM : 0.5 A
Collector-base voltage
V_(BR)CBO : 35 V
Operating and storage junction temperature range
T_stg: -55℃ to +150℃
T_{j :} 150℃
TO—92
1. EMITTER
2.COLLECTOR
3.BSAE
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ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)_CBO Ic= 100 μA， I_E=0
35
V
Collector-emitter breakdown
voltage
V(BR)_CEO Ic= 0. 1 mA， I_B=0
30
V
Emitter-base breakdown voltage V(BR)_EBO I_E= 100 μA， I_C=0
5
V
Collector cut-off current
I_CBO
V_CB=35 V , I_E=0
0.1 μA
Emitter cut-off current
I_EBO
V_EB= 5 V， I_C=0
0.1 μA
DC current gain
Collector-emitter saturation
voltage
Base-emitter voltage
H_FE(1)
H_FE(2)
V_CE(sat)
V_BE
V_CE=1V, I_C=0
70
V_CE= 6V, I_C= 400mA 25
I_C= 100mA, I_B=10mA
V_CE=1V, I_C=100mA
400
0.25 V
1.0 V
Transition frequency
f_T
V_CE= 6 V, I_C= 20mA 200
MHz
CLASSIFICATION OF H_FE
Rank
O
Range
H_FE(1)
H_FE(2)
70-140
25(min)
Y
120-240
40(min)
GR
200-400
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