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AV13007 Datasheet, PDF (1/3 Pages) Avic Technology – TO-220 Plastic-Encapsulate Transistors
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AV13007
TO-220 Plastic-Encapsulate Transistors
AV13007 TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 2 W Tamb=25
Collector current
ICM: 8 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 220
1.BASE
2.COLLECTOR
3.EMITTER
123
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1mA IE=0
700
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA IC=0
9
V
Collector cut-off current
ICBO
VCB= 700V IE=0
1
mA
Emitter cut-off current
IEBO
VEB= 9 V IC=0
100
µA
DC current gain
hFE 1
VCE= 5V, IC= 2 A
8
40
hFE 2
VCE=5 V, IC=5A
5
30
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.4A
1
V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
fT
Cob
tf
ts
IC=2A, IB= 0.4A
Ic=500mA,VCE=10V
f=1MHZ
4
VCE=10,IE=0 f=0.1MHz
Vcc=125V, Ic=5A
IB1=-IB2=1A
1.2
V
MHZ
80
pF
0.7
µs
3
µs
Range
8-15
15-20
20-25
25-30
30-35
35-40
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com