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| AV13005 Datasheet, PDF (1/2 Pages) Avic Technology – TO-220 NPN SILICON POWER TRANSISTOR | |||
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@vic
AV13005
TO-220 NPN SILICON POWER TRANSISTOR
AV13005 TRANSISTORï¼ NPN ï¼
FEATURES
Power dissipation
PCM : 1.5 Wï¼Tamb=25âï¼
Collector current
ICM : 4.0 A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
TJï¼Tstg: -55â to +150â
ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 1000μAï¼ IE=0
700
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mAï¼ IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO IE= 1000μAï¼ IC=0
9
V
Collector cut-off current
ICBO
VCB= 700 V IE=0
1000 μA
Collector cut-off current
ICEO
VCE= 400 V IB=0
100 μA
Emitter cut-off current
IEBO
VEB= 9 Vï¼ IC=0
1000 μA
DC current gain
HFEï¼2ï¼
VCE= 5V, IC = 1000 mA
10
40
Collector-emitter saturation voltage VCE(sat) IC= 2000 mA, IB= 500 mA
0.6 V
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
VBE(sat) IC= 2000mA, IB= 500mA
1.6 V
VCE= 10 V, IC= 500 mA
fT
5
f =1MHz
MHz
TF
IB1 = - IB2 =0.4A, IC =2A
TS
VCC =120V
0.9
μS
4.0
CLASSIFICATION OF HFE(2)
Rank
A
Range
10-15
B1
15-20
B2
20-25
C
25-30
D
30-35
E
35-40
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com
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