2N5551 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

@vic
2N5551
NPN General Purpose Amplifier
FEATURES & USE
TO – 92
®
High Collector Breakdown Voltage; Low Noise;
®
Complementary to 2N5401
®
This device is designed as a general purpose amplifier and switch for
applications requiring high voltages.
1.Emitter 2.Base 3.Collector
Absolute Maximum Ratings Ta = 25`C

Symbol
VCBO
VCEO
VEBO
IC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Ratings
180
160
5
600
150
-55 - 150
Units
V
V
V
mA
`C
`C
Electrical Characteristics Ta = 25`C

Symbol
Parameter
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
IC=100ȰAđIE=0
IC=1mAđIB=0
IE=100ȰAđIC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=10mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
Min. Typ. Max. Units
180
V
160
V
5
V
200 nA
200 nA
80
300
0.25 V
1.0
V
hFE Classification
Classification
hFE
A
50-100
B1
100-150
B2
150-200
C1
200-230
C2
230-250
C3
250-300
Copyright@vic Electronics Corp.
1
Website:http://www.avictek.com