CNY17-2-300E Datasheet, PDF (5/7 Pages) AVAGO TECHNOLOGIES LIMITED – Phototransistor Optocoupler High Collector-Emitter Voltage Type

Electrical Specifications (T_A = 25˚C)
Parameter
Symbol Min.
Typ.
Max. Units
Test Conditions
Forward Voltage
V_F
–
1.4
Reverse Current
I_R
–
–
Terminal Capacitance
C_t
–
–
Collector Dark Current
I_CEO
–
–
Collector-Emitter Breakdown Voltage
BV_CEO
70
–
Emitter-Collector Breakdown Voltage
BV_ECO
6
–
Collector-Base Breakdown Voltage
BV_CBO
70
–
Collector Current
I_C
4
–
*Current Transfer Ratio

CNY17-1
CTR
40
–
CNY17-2
63
–
CNY17-3
100
–
CNY17-4
160
–
1.7
V
10
µA
100
pF
I_F = 60 mA
V_R = 6 V
V = 0, f = 1 MHz
50
nA
V_CE = 10 V
–
V
I_C = 0.1 mA, I_F = 0
–
V
I_E = 10 µA, I_F = 0
–
V
I_C = 0.1 mA, I_F = 0
32
mA
I_F = 10 mA
80
%
V_CE = 5 V
125
200
320
Collector-Emitter Saturation Voltage
V_CE(sat)
–
–
0.3
V
Response Time (Rise)
t_r
–
5
10
µs
Response Time (Fall)
t_f
–
5
10
µs
Isolation Resistance
R_iso
1 x 10¹¹ –
–
Ω

I_F = 10 mA, I_C = 2.5 mA
V_CE = 5 V, I_C = 10 mA
R_L = 100 Ω
DC 500 V
40 ~ 60% R.H.
Floating Capacitance
C_f
–
–
2
pF
V = 0, f = 1 MHz
* CTR = ^ICx 100%
I_F
80
60
40
20
0
-55 -25 0 25 50 75 100 125
T_A – AMBIENT TEMPERATURE – °C
200
160
150
100
50
0
-55 -25 0 25 50 75 100 125
T_A – AMBIENT TEMPERATURE – °C
2
0
-2
R_L = 200 Ω
-4
R_L = 150 Ω
-6
R_L = 75 Ω
-8
I_F = 10 mA
V_CC = 5 V
T_A = 25°C
-10
0.5 1 2 5 10 20 50 100 200 500
f – FREQUENCY – kHz
Figure 1. Forward current vs. temperature.
CNY17-1 fig 1
Figure 2. Collector power dissipation vs. tempera-
ture.
CNY17-1 fig 2
Figure 3. Frequency response.
CNY17-1 fig 3