HSMB-C1XX Datasheet, PDF (4/9 Pages) AVAGO TECHNOLOGIES LIMITED – Surface Mount ChipLEDs

Device Selection Guide
Package Dimension (mm)
1.6 (L) x 0.8 (W) x 0.6 (H)
1.6 (L) x 0.8 (W) x 0.8 (H)
2.0 (L) x 1.25 (W) x 0.8 (H)
3.2 (L) x 1.5 (W) x 1.0 (H)^[1]
3.2 (L) x 1.6 (W) x 1.1 (H)
GaN Blue
HSMB-C196
HSMB-C192
HSMB-C172
HSMB-C112
HSMB-C152
Note:
1. Right angle package.
Package Description
Untinted, Diffused
Untinted, Diffused
Untinted, Diffused
Untinted, Nondiffused
Untinted, Diffused
Absolute Maximum Ratings at T_A = 25˚C
Parameter
DC Forward Current^[1]
HSMB-C112/172/192/196/152
10
Units
mA
Power Dissipation
46
mW
Reverse Voltage (I_R = 100 µA)
5
V
LED Junction Temperature
95
˚C
Operating Temperature Range –30 to +85
˚C
Storage Temperature Range
–40 to +85
˚C
Soldering Temperature
See reflow soldering profile (Figure 7 & 8)
Note:
1. Derate linearly as shown in Figure 4.
Electrical Characteristics at T_A = 25˚C
Part Number
Forward
Voltage
V_F (Volts)
@ I_F = 10 mA
Typ. Max.
HSMB-C152/C172/C192/C196
4.0
4.6
HSMB-C112
4.0
4.6
V_F Tolerance: ± 0.1 V
Reverse
Breakdown
V_R (Volts)
@ I_R = 100 µA
Min.
5
5
Capacitance C
(pF), V_F = 0,
f = 1 MHz
Typ.
43
43
Thermal
Resistance
Rθ_J-PIN (˚C/W)
Typ.
550
550
Optical Characteristics at T_A = 25˚C
Part Number
Luminous
Intensity
I_v (mcd)
@ 10 mA^[1]
Min. Typ.
Peak
Wavelength
λ_peak (nm)
Typ.
Color
Dominant
Wavelength
λ_d[2] (nm)
Typ.
Viewing Angle
2 θ_1/2 Degrees^[3]
Typ.
Luminous
Efficacy
η_v (lm/w)
Typ.
HSMB-C112
1.1 3.1
428
462
130
55
HSMB-C172
1.1 3.0
428
462
170
55
HSMB-C192
1.1 3.0
428
462
170
55
HSMB-C196
1.1 3.0
428
462
170
55
HSMB-C152
1.1 3.0
428
462
170
55
Notes:
1.The luminous intensity I_v is measured at the peak of the spatial radiation pattern which may not be aligned with the mechanical axis of the lamp
package.
2.The dominant wavelength λ_d is derived from the CIE Chromatically Diagram and represents the perceived color of the device.
3.θ_1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
4