HCPL-354-00AE Datasheet, PDF (4/6 Pages) AVAGO TECHNOLOGIES LIMITED – AC Input Phototransistor Optocoupler SMD Mini-Flat Type

Absolute Maximum Ratings
Parameters
Symbol
Min.
Max.
Units
Storage Temperature
T_S
–55
150
˚C
Ambient Operating Temperature
T_A
–55
100
˚C
Lead Solder Temperature for 10s
(1.6 mm below seating plane)
T_sol
260
˚C
Average Forward Current
Input Power Dissipation
I_F
P_I
±50
mA
70
mW
Collector Current
Collector-Emitter Voltage
I_C
V_CEO
50
mA
35
V
Emitter-Collector Voltage
Collector Power Dissipation
V_ECO
P_C
6
V
150
mW
Total Power Dissipation
Isolation Voltage
(AC for 1 minute, R.H. = 40 ~ 60%)^[1]
P_tot
V_iso
170
mW
3750
V_rms
Electrical Specifications (T_A = 25˚C)
Parameter
Symbol Min.
Typ.
Max.
Units
Forward Voltage
V_F
–
1.2
1.4
V
Terminal Capacitance
Collector Dark Current
C_t
–
I_CEO
–
30
250
pF
–
100
nA
Collector-Emitter Breakdown Voltage
BV_CEO
35
–
–
V
Emitter-Collector Breakdown Voltage
BV_ECO
6
–
–
V
Collector Current
Current Transfer Ratio^[2]
I_C
0.2
–
CTR
20
–
4
mA
400
%
Collector-Emitter Saturation Voltage
V_CE(sat)
–
0.1
0.2
V
Isolation Resistance
R_iso
5 x 10¹⁰
1 x 10¹¹
–
Ω

Floating Capacitance
C_f
–
0.6
1
pF
Response Time (Rise)
Response Time (Fall)
t_r
–
4
18
µs
t_f
–
3
18
µs
Test Conditions
I_F = ±20 mA
V = 0, f = 1 kHz
V_CE = 20 V, I_F = 0
I_C = 0.1 mA, I_F = 0
I_E = 10 µA, I_F = 0
I_F = ±1 mA,
V_CE = 5 V
I_F = ±20 mA, I_C = 1 mA
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
V_CE = 2 V, I_C = 2 mA,
R_L = 100 Ω
Rank Mark
CTR (%)
A
50 ~ 150
No Mark
20 ~ 400

Conditions
I_F = ±1 mA,
V_CE = 5 V,
T_A = 25˚C
Notes:
1. Isolation voltage shall be measured using the following method:
(a) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.
(b) The isolation voltage tester with zero-cross circuit shall be used.
(c) The waveform of applied voltage shall be a sine wave.
2. _{CTR =}
I_C
I_F
x 100%