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HCPL-181-06DE Datasheet, PDF (4/6 Pages) AVAGO TECHNOLOGIES LIMITED – Phototransistor Optocoupler SMD Mini-Flat Type | |||
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Absolute Maximum Ratings (TA = 25ËC)
Storage Temperature, TS
â55ËC to +155ËC
Operating Temperature, TA
â55ËC to +100ËC
Lead Solder Temperature, max.
(1.6 mm below seating plane)
260ËC for 10 s
Average Forward Current, IF
50 mA
Reverse Input Voltage, VR
6V
Input Power Dissipation, PI
70 mW
Collector Current, IC
50 mA
Collector-Emitter Voltage, VCEO
80 V
Emitter-Collector Voltage, VECO
6V
Collector Power Dissipation
150 mW
Total Power Dissipation
170 mW
Isolation Voltage, Viso
(AC for 1 minute, R.H. = 40 ~ 60%)
3750 Vrms
Rank Mark
A
B
C
D
CTR (%)
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Conditions
IF = 5 mA,
VCE = 5 V, TA = 25ËC
Electrical Specifications (TA = 25ËC)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
IC
CTR
VCE(sat)
tr
tf
Riso
Min.
Typ.
Max.
â
1.2
1.4
â
â
10
â
30
250
â
â
100
80
â
â
6
â
â
2.5
â
30
50
â
600
â
â
0.2
â
4
18
â
3
18
5 x 1010 1 x 1011 â
Floating Capacitance
* CTR = IC x 100%
IF
60
Cf
â
0.6
1.0
200
50
150
40
30
100
20
50
10
0
-55 0 25 50 75 100 125
TA â AMBIENT TEMPERATURE â C
Figure 1. Forward current vs. temperature.
4
0
-55 0 25 50 75 100 125
TA â AMBIENT TEMPERATURE â C
Figure 2. Collector power dissipation vs. tem-
perature.
Units
V
μA
pF
nA
V
V
mA
%
V
μs
μs
ï
pF
Test Conditions
IF = 20 mA
VR = 4 V
V = 0, f = 1 KHz
VCE = 20 V
IC = 0.1 mA, IF = 0
IE = 10 μA, IF = 0
IF = 5 mA, VCE = 5 V
IF = 20 mA, IC = 1 mA
VCC = 2 V, IC = 2 mA
RL = 100 ï
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
6
TA = 25 C
5
IC = 0.5 mA
4
IC = 1 mA
IC = 3 mA
3
IC = 5 mA
IC = 7 mA
2
1
0
0
5
10
15
IF â FORWARD CURRENT â mA
Figure 3. Collector-emitter saturation voltage
vs. forward current.
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