MGA-425P8_07 Datasheet, PDF (3/15 Pages) AVAGO TECHNOLOGIES LIMITED – GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package

MGA-425P8 Electrical Specifications
T_A = 25°C, DC bias for RF parameter is Vds = 3.3V and R_bias = 680Ω (unless specified otherwise)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
I_ds
Device Current
G
Gain^[1]
Freq=5.25 GHz
mA
51
58
dB
14.5
16
NF
Noise Figure^[1] Freq=5.25 GHz
dB
–
1.7
OIP3
32.9
Output 3^rd Order Intercpt Point^[1,2]
–

Freq=5.25 GHz
P1dB
Output 1dB Compressed^[1] Freq=5.25 GHz
dBm
18.25
20.3
PAE
Power Added Efficiency^[1] Freq=5.25 GHz
%
33.5
47
EVM
Error Vector Magnitude^[3] at Pout=13.3 dBm
%
–
EVM
Error Vector Magnitude^[3] at Pout=12 dBm
%
–
3
Notes:
1. Measurement obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. 5.25GHz OIP3 test condition: F1 = 5.25 GHz, F2 = 5.255 GHz and Pin = -5 dBm per tone.
3. EVM test condition: 802.11a 64QAM/54 Mbps OFDM Modulation and Freq = 5.25 GHz.
Max.
65
17.5
–
dBm 29
–
–
5–
–
Vd= +3.3V
1000 pF
0.6 pF 0.6 pF
2.7 nH
2.2 µF
680 Ω
5
2 _MGA-425P8
3.3 nH
7
2.2 pF
1.5 pF
15 Ω
1, 3, 4, 6, 8
1 pF
Figure 6. Simplified schematic of 5.25 GHz production test board used for Gain, NF,
OIP3 , P1dB, PAE and EVM measurements. This circuit achieves a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual
measurements.