MSA-0300 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Cascadable Silicon Bipolar MMIC Amplifier

MSA-0300 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation ^[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum ^[1]
80 mA
425 mW
+13 dBm
2 0 0 ˚C
-65 to 200 ˚C
Thermal Resistance ^[2,4] :
θ_jc = 45 ˚C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (T_MS) = 25°C.
3. Derate at 22.2 mW/°C for T_C > 181°C.
4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications^[1], T_A = 25°C
Symbol
GP
∆G P
f3 dB
VSWR
NF
P 1 dB
IP 3
tD
Vd
dV/dT
Parameters and Test Conditions ^[2] : I _d = 35 mA, Z _O = 50 Ω
PowerGain(|S 21 | ²)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 1.8 GHz
3 dB Bandwidth
Input VSWR
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
50 Ω Noise Figure
f = 1.0 GHz
Output Power at 1 dB Gain Compression
f = 1.0 GHz
Third Order Intercept Point
f = 1.0 GHz
Group Delay
f = 1.0 GHz
Device Voltage
Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dBm
dBm
psec
V
4.5
m V/˚C
Typ. Max.
12.5
± 0.6
2.8
1.8:1
1.8:1
6.0
10.0
23.0
125
5.0 5.5
Ð8.0
Notes:
1. The recommended operating current range for this device is 20 to 50 mA.
Typical performance as a function of current is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
MSA-0300-GP4
Devices Per Tray
100