MGA-675T6-TR1G Datasheet, PDF (2/16 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise Amplifi er with Shutdown Mode in Low Profi le Package for 4.9 - 6 GHz Application

Absolute Maximum Ratings ^[1] T_A = 25 °C
Symbol
V_dd
P_in,max
P_diss
T_j
T_STG
Parameter
Device Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
Units
V
dBm
mW
°C
°C
Absolute Max.
3.6
12
45
150
-65 to 150
Thermal Resistance ^[2,3]
(Vdd = 3.0V, Id = 10mA) , θjc = 65 °C/W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red Measurement Technique.
3. Board temperature T_B is 25 °C , for T_B > 147 °C, Derate the device power at 15.4 mW per °C rise in board ( Package belly) temperature.
Electrical Specifications^[4,5]
T_A = 25 °C, Vdd = Vshutdown = 3V @ 10mA, RF performance at 5.5 GHz, measured on demo board (see Figure 4) unless other-
wise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vdd
Supply Voltage
V
3
VShutdown Shutdown Voltage
V
3
Ids
Supply Current
mA
6.8
10
13
Gain
Gain
dB
16.3
17.8
19.3
IIP3 ^[5]
Input Third Order Intercept Point
dBm
-
-3
-
NF
Noise Figure
dB
-
1.75
2.1
IP1dB
Input Power at 1dB Gain Compression
dBm
-
-10
-
S11
Input Return Loss, 50Ω source
dB
-
-8.5
-
S22
Output Return Loss, 50Ω load
dB
-
-9
-
Notes:
4. Measurements at 5.5GHz obtained using demo board described in Figure 1.
5. LNA Mode IIP3 test condition: F_RF1 = 5.5 GHz, F_RF2 = 5.505 GHz with input power of -30dBm per tone.
The LNA operation configuration
Vdd
LNA Mode
3V
Shutdown Mode
3V
VShutdown
3V
0V
2