MGA-634P8_15 Datasheet, PDF (2/14 Pages) AVAGO TECHNOLOGIES LIMITED – Ultra Low Noise, High Linearity Low Noise Amplifi er

Absolute Maximum Rating ^[1] T_A=25°C
Symbol
V_dd
V_bias
P_in,max
P_diss
T_j
T_stg
Parameter
Device Voltage,
RF output to ground
Gate Voltage
CW RF Input Power
(V_dd = 5.0V, I_d = 50 mA)
Total Power Dissipation ^[2]
Junction Temperature
Storage Temperature
Units Absolute Maximum
V
5.5
V
0.7
dBm
+20
W
0.5
°C
150
°C
-65 to 150
Thermal Resistance
Thermal Resistance ^[3]
(V_dd = 5.0V, I_dd = 50mA)
_jc = 62°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Power dissipation with device turned on.
Board temperature T_B is 25°C. Derate at
16mW/°C for T_B>119°C.
3. Thermal resistance measured using Infra-Red
Measurement Technique
Electrical Specifications ^{[1], [4]}
RF performance at T_A = 25°C, V_dd = 5V, R_bias = 5.6 kOhm, 1.9 GHz, measured on demo board in Figure 1 with component
listed in Table 1 for 1.9 GHz matching.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
I_dd
Drain Current
Gain
Gain
mA
37
48
61
dB
16.1
17.4
19.1
OIP3 ^[2]
Output Third Order Intercept Point
dBm
33
36
NF ^[3]
Noise Figure
dB
0.44
0.69
OP1dB
Output Power at 1dB Gain Compression
dBm
21
IRL
Input Return Loss, 50 source
dB
15.5
ORL
Output Return Loss, 50 load
dB
13
REV ISOL
Reverse Isolation
dB
30
Notes:
1. Measurements at 1.9 GHz obtained using demo board described in Figure 1.
2. OIP3 test condition: F_RF1 = 1.9 GHz, F_RF2 = 1.901 GHz with input power of -10dBm per tone.
3. For NF data, board losses of the input have not been de-embedded.
4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2