MGA-43328 Datasheet, PDF (2/19 Pages) AVAGO TECHNOLOGIES LIMITED – 2.5–2.7 GHz 29dBm High Linearity Wireless Data Power Amplifi er

Absolute Maximum Rating^[1] T_A=25°C
Symbol Parameter
Vdd, Vbias Supply voltages, bias supply voltage
Vc
Control Voltage
P_in,max
P_diss
T_j,MAX
T_STG
CW RF Input Power
Total Power Dissipation ^[3]
Junction Temperature
Storage Temperature
Units
V
V
dBm
W
°C
°C
Absolute Max.
6.0
(Vdd)
20
8.0
150
-65 to 150
Thermal Resistance
Thermal Resistance ^[2]
_jc = 11.7°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-
Red Measurement Technique.
3. Board temperature (T_c) is 25°C, for T_c >56.4°C
derate the device power at 85.5mW per °C
rise in board temperature adjacent to
package bottom.
Electrical Specifications
T_A = 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k, R3 = 390, R4 = 1.1k as shown in Figure 36), Vbyp = 0V, Iqtotal
= 470mA, RF performance at 2.6 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless
otherwise stated.
Symbol
Parameter and Test Condition
Units Min.
Vdd
Supply Voltage
V
Iqtotal
Quiescent Supply Current (normal high gain mode)
mA
Quiescent Supply Current (low gain mode, Vbyp = 5.0V)
mA
Gain
Gain
dB
35.0
OP1dB
Output Power at 1dB Gain Compression
dBm
Pout_5V
Linear Output Power @ 2.5% EVM with 64-QAM OFDMA
modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC
dBm
27.7
Itotal_5V Total current draw at Pout_5V level
mA
S11
Input Return Loss, 50 source
dB
S22
Output Return Loss, 50 source
dB
S12
Reverse Isolation
dB
Atten
Gain attenuation in low gain mode
dB
21.5
Vdet
Detector output DC voltage @ 29dBm linear Pout
V
DetR
Detector RF dynamic range
dB
NF
Noise figure
dB
S
Stability under load VSWR of 6:1 (all phase angle), spurious output
dBc
Typ.
5.0
470
470
37.3
35.5
29.3
1017
-12
-11
60
24.5
2.6
10
2.1
Max.
1250
27.5
-60
2