HSMS-2812-BLKG Datasheet, PDF (2/10 Pages) AVAGO TECHNOLOGIES LIMITED – Surface Mount RF Schottky Barrier Diodes

Absolute Maximum Ratings^[1] T_C = 25°C
Symbol
Parameter
Unit
SOT-23/SOT-143
SOT-323/SOT-363
I_f
Forward Current (1 μs Pulse)
Amp
1
1
P_IV
Peak Inverse Voltage
V
Same as V_BR
Same as V_BR
T_j
Junction Temperature
°C
150
150
T_stg
Storage Temperature
°C
-65 to 150
-65 to 150
θ_jc
Thermal Resistance^[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T_C = +25°C, where T_C is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Electrical Specifications T_C = 25°C, Single Diode^[3]


Minimum Maximum
Part Package
Breakdown Forward
Number Marking Lead
Voltage Voltage
HSMS^[4] Code Code Configuration
V_BR (V)
V_F (mV)
Maximum
Forward
Voltage
V_F (V) @
I_F (mA)
Maximum
Reverse
Leakage Maximum
I_R (nA) @ Capacitance
V_R (V)
C_T (pF)
Typical
Dynamic
Resistance
R_D (Ω)^[5]
2810
B0
0 Single
20
2812
B2
2 Series
2813
B3
3 Common Anode
2814
B4
4 Common Cathode
2815
B5
5 Unconnected Pair
2817
B7
7 Ring Quad^[4]
2818
B8
8 Bridge Quad^[4]
281B
B0
B Single
281C
B2
C Series
281E
B3
E Common Anode
281F
B4
F Common Cathode
281K
BK
K High Isolation
Unconnected Pair
281L
BL
L Unconnected Trio
410 1.0  35 200  15
  Test Conditions
I_R = 10 mA I_F = 1 mA

Notes:
1. ∆V_F for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. ∆C_TO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R_D = R_S + 5.2 Ω at 25°C and I_f = 5 mA.
1.2
V_F = 0 V
f = 1 MHz
15
I_F = 5 mA