HSMP-386J_15 Datasheet, PDF (2/6 Pages) AVAGO TECHNOLOGIES LIMITED – High Power RF PIN Diode

Table 1. Absolute Maximum Ratings ^[1] at T_C = +25°C
Symbol
Parameter
Unit
Max Rating
I_F
Forward Current (1µs Pulse) per die ^[2]
Amp
1
P_IV
Peak Inverse Voltage
V
100
T_j
Junction Temperature
°C
150
T_stg
Storage Temperature
°C
-60 to 150
θ_jc
Thermal Resistance ^[3]
°C/W
45
DC P_diss
DC Power Dissipation ^[4]
W
2.0
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Eight dice are connected in parallel for this device.
3. TC = +25°C, where T_C is defined to be the temperature at the package pins where contact is made to the circuit board.
4. Maximum DC P_diss measured without RF input and maximum rating is base on device junction temperature.
T (Max.Operating) - 25 ^°C
P_diss = _{Thermal Resistance}
Table 2. Electrical Performance at T_C = +25°C
Test Conditions
Minimum
Breakdown Voltage
V_BR (V)
100
V_R = V_BR
Measure I_R ≤ 5uA
Typical
Forward Voltage
V_f (V)
0.85
I_F = 50mA
Maximum
Series Resistance
R_S (Ohm)
0.77
I_F = 50 mA
f = 100 MHz
Maximum
Total Capacitance
C_T (pF)
1.25
V_R = 50V
f = 1MHz
Table 3. Typical Performance at T_C = +25°C
Series Resistance
R_S (W)
0.65
Test Conditions
I_F = 50mA
f = 100MHz
Carrier Lifetime
(nS)
260
I_F = 50mA
I_R = 100mA
Reverse Recovery Time
T_rr (nS)
130
V_R = 5V
I_F = 50mA
90% Recovery
Total Capacitance
C_T (pF)
0.75
V_R = 50V
f = 1MHz