AT-41500 Datasheet, PDF (2/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip

Table 1. Absolute Maximum Ratings ^[1]
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_J
T_STG
qjc
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation^{[2, 3]}
Junction Temperature
Storage Temperature
Thermal Resistance ^{[2, 4]}
Unit
V
V
V
mA
mW
°C
°C
°C/W
Max Rating
1.5
20
12
60
500
200
-60 to 200
95
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—_{MOUNTING SURFACE} = 25 ^°C
3. Derate at 10.5 mW/^°C for T—_{MOUNTING SURFACE} > 153 ^°C.
4. The small spot size of this technique results in a higher, though more accurate determination of θ_jc than do the alternate method.
Table 2. Electrical Specifications at T_A = +25^°C, V_CE=8V
Symbol Parameter and Test Condition
NFo
Optimum Noise Figure: Ic = 10 mA
Units Min.
Typ.
Max.
f = 1.0 GHz dB
1.40
f = 2.0 GHz dB
1.70
f = 4.0 GHz dB
3.00
GA
Gain @ NFo ; Ic=10mA
f = 1.0 GHz dB
17.0
f = 2.0 GHz dB
12.5
f = 4.0 GHz dB
8.0
|S_21E|² Insertion Power Gain : Ic = 25 mA
f = 1.0 GHz dB
17.0
f = 2.0 GHz dB
11.0
P1dB Power Output @1dB Gain Compression:Ic=25 mA
f = 2.0 GHz dBm
18.0
G1dB 1 dB Compressed Gain: Ic = 25 mA
f = 2.0 GHz dB
13.0
f_T
Gain Bandwidth Product: Ic = 25 mA
GHz
8.0
h_FE
Forward Current Transfer Ratio: Ic = 10 mA
30
150
270
I_CBO
Collector Cutoff Current: VCB = 8 V
uA
0.2
I_EBO
Emitter Cutoff Current: VEB = 1 V
uA
1
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. RF performance is measured in 86 plastic packages.