AT-41486 Datasheet, PDF (2/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Absolute
Units
Maximum^[1]
V
1.5
V
20
V
12
mA
60
mW
500
°C
150
°C
-65 to 150
Ordering Information
Part Numbers
AT-41486-BLK
AT-41486-BLKG
AT-41486-TR1
AT-41486-TR1G
AT-41486-TR2
AT-41486-TR2G
No. of Devices
100
100
1000
1000
4000
4000
Comments
Bulk
Bulk
7" Reel
7" Reel
13" Reel
13" Reel
Note: Order part number with a “G” suffix if lead-free option is desired.
Thermal Resistance^[2,4]:
_jc = 165°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. T_CASE = 25°C.
3. Derate at 6 mW/°C for T_C > 68°C.
4. See MEASUREMENTS section “Thermal Re-
sistance” for more information.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions
|S_21E| ²
Insertion Power Gain; V_CE = 8 V, I_C = 25 mA
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 25 mA
G_{1 dB}
1 dB Compressed Gain; V_CE = 8 V, I_C = 25 mA
NF_O
Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA
G_A
Gain @ NF_O; V_CE = 8 V, I_C = 10 mA
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 25 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 10 mA
I_CBO
Collector Cutoff Current; V_CB = 8 V
I_EBO
Emitter Cutoff Current; V_EB = 1 V
C_CB
Collector Base Capacitance^[1]: V_CB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units Min. Typ. Max.
dB
17.5
11.5
dBm
18.0
dB
13.5
dB
1.4 1.8
1.7
3.0
dB 17.0 18.0
13.0
9.0
GHz
8.0
— 30 150 270
μA
0.2
μA
1.0
pF
0.25
2