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ASLM-5829 Datasheet, PDF (2/6 Pages) AVAGO TECHNOLOGIES LIMITED – Schottky Assisted Low Power PIN Diode Limiter
Table 1. Absolute Maximum Rating [1] Tc = +25°C, PIN diode
Symbol
Parameter
Absolute Max.
Absolute Max.
Units
for PIN Diode
for Schottky Diode
IF
Forward Current (1µs Pulse)
Amp
1
1
PIV
Peak Inverse Voltage
V
100
15
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θJC
Thermal Resistance [2]
°C/W
150
Notes:
1. Operation in excess of anyone of these conditions may result in permanent damage to the device.
2. TC = 25°C, TC where is defined to be the temperature at the package pins where contacts is made to the circuit board.
Table 2. Electrical Specifications, Tc = +25°C, PIN diode
Symbol
Parameter and Test Condition
VBR
Breakdown Voltage @ IR ≤ 10µA
VF
Forward Voltage @ IF = 30mA
RS
Typical Series Resistance @ Freq = 100MHz & IF = 1mA
RS
Typical Series Resistance @ Freq = 100MHz & IF = 5mA
CT
Typical Total Capacitance @ Freq = 1MHz & VR = 5V
τ
Carrier Lifetime @ IF =10mA & IR = 6mA
Units
Min.
Typ
Max.
V
100
128
–
V
–
0.90
–
Ohm
–
4.00
–
Ohm
–
1.90
2.5
pF
–
0.28
0.375
ns
–
200
–
Table 3. Electrical Specifications, Tc = +25°C, Schottky diode
Symbol
VBR
IR
VF
VF
CT
RD
Parameter and Test Condition
Breakdown Voltage @ IR ≤ 100µA
Reverse Leakage Current @ VBR = 1V
Forward Voltage @ IF = 1mA
Forward Voltage @ IF = 10mA
Typical Total Capacitance @ Freq = 1MHz & VR = 0V
Typical Dynamic Resistance, IF = 5mA
Units
Min.
Typ
Max.
V
15
22
–
nA
–
40
100
V
–
0.32
0.34
V
–
0.45
0.50
pF
–
0.7
1.0
Ohm
–
12
–
2