AMMP-6333 Datasheet, PDF (2/9 Pages) AVAGO TECHNOLOGIES LIMITED – 18 – 33 GHz, 0.2 W Driver Amplifier in SMT Package

Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. All tested parameters guaranteed with measurement accuracy +/- 2dB for P1dB of 17,25 and 32GHz +/- 0.5 for Gain
of 17GHz, +/- 1 dB for Gain of 25 and 32GHz
Table 1. RF Electrical Characteristics
TA=25°C, Vd=3.0V, Id(Q)=230mA, Zin=Zo=50 Ω
Parameter
Small Signal Gain, Gain
Output Power at 1dBGain Compression,
P1dB
Output Power at 3dBGain Compression,
P3dB
Output Third Order Intercept Point,
OIP3
Reverse Isolation, Iso
Input Return Loss, Rlin
Output Return Loss, RLout
17-20GHz
Min Typ Max
14 16
18 20.5
21.5
30
45
10
10
20-30GHz
Min Typ Max
19 22
22 24.5
24.5
30
45
10
14
30-33GHz
Min Typ Max Unit
18 20.5
dB
21 24
dBm
Comment
23.5
dBm
30
dBm
45
dB
8
dB
10
dB
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy.
Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Min.
Typical Max.
Unit
Comments
Drain Supply Current, Id
230
Gate Supply Operating Voltage, Vg
2
mA
Vd=5 V, Vg set for typical IdQ –
quiescent current
V
IdQ = 230 mA
Gate Supply Current, Ig
7
mA
2