AMMC-6233_15 Datasheet, PDF (2/9 Pages) AVAGO TECHNOLOGIES LIMITED – GaAs Low Noise Amplifier

Absolute Maximum Ratings^[1]
Symbol
Parameters/Condition
Unit
Vd
Drain to Ground Voltage
V
Id
Drain Current
mA
Pin
RF CW Input Power Max
dBm
Tch
Max Channel Temperature
C
Tstg
Storage Temperature
C
Tmax
Maximum Assembly Temperature
C
Max
5.5
100
10
+150
-65 +150
260 for 20s
Note:
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings
for Vd, Id, and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties^[2]
Symbol
Idd
Vdd
qjc
Parameter and Test Condition
Drain Current Under Any RF Power Drive and Temp.] (Vdd = 3 V)
Drain Supply Voltage
Thermal Resistance^[3]
Unit Min. Typ. Max.
mA
65
90
V
3
5
C/W
27
Notes:
2. Ambient operational temperature TA = 25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at
backside temp. (Tb) = 25°C calculated from measured data.
AMMC-6233 RF Specifications^[4]
TA = 25°C, Vdd = 3.0 V, Idd = 65 mA, Zo = 50 Ω
Symbol Parameters and Test Conditions
Frequencies
(GHz)
Gain
RF Small Signal Gain
18, 26, 31
NF
Noise Figure into 50W(5)
18, 26, 31
RLin
RLout
Iso
P-1dB
OIP3
Input Return Loss
Output Return Loss
Isolation
Output Power at 1dB⁽⁷⁾ Gain Compression
Output Third Order Intercept Point
Units
Minimum
dB
18
dB
dB
dB
dB
dBm
dBm
Typical
22
3.0
-12
-12
-45
8
19
Maximum
4.0
Notes:
4. All tested parameters guaranteed with measurement accuracy +/-0.5 dB for the 6 to 20 GHz range, ±0.75 dB for the 20 to 33 GHz range and
±1.0 dB for the 33 to 50 GHz range.
5. NF is measured on-wafer. Additional bond wires (~0.2 nH) at input could improve NF at some frequencies.