AMMC-5033 Datasheet, PDF (2/9 Pages) AVAGO TECHNOLOGIES LIMITED – 17.7 - 32 GHz Power Amplifier

AMMC-5033 DC Specifications/Physical Properties^[1]
Symbol
Parameters and Test Conditions
I_d1
I_d2
Vgg
DETBias
First Stage Drain Supply Current
(V_d1 = 3.5 V, V_g1 = Open, V_gg set for I_d2 Typical)
Second Stage Drain Supply Current
(V_d2 = 5 V, V_g1 = Open, V_gg set for I_d2 Typical)
Gate Supply Operating Voltage
(I_d1(Q) + I_d2(Q)  = 780 (mA))
Detector Bias Voltage (Optional)
θ_c1(ch-bs)
First Stage Thermal Resistance^[2]
(Backside Temperature, Tb = 25°C)
θ_c2(ch-bs)
Second Stage Thermal Resistance^{[2, 3]}
(Backside Temperature, Tb = 25°C)
Units
Min.
mA
Typ.
Max.
280
320
V
500
V
-0.75
-0.6
-0.4
V
Vd2
°C/W
31
°C/W
19
Notes:
1.  Backside temperature T_b = 25°C unless otherwise noted.
2.  Channel-to-backside Thermal Resistance (θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-
tance at backside temperature (Tb) = 25°C calculated from measured data.
3.  Channel-to-backside Thermal Resistance (θch-b) = 24°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal Resis-
tance at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-5033 RF Specifications^{[4, 5]}
Tb = 25°C, V_d1 = 3.5 V, V_d2 = 5 V, I_d1(Q) = 280 mA, I_d2(Q) = 500 mA, Zo = 50 Ω
  Lower Band   Mid Band   Upper Band
  Specifications   Specifications   Specifications
Parameters and   (17.7 - 21 GHz)   (21 - 26.5 GHz)   (26.5 - 32 GHz)
Symbol Test Condition
Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Gain
Small-Signal Gain^[5]
dB 20 22
17.5 20
16.5 18.5
P_-1dB
Output Power at 1dB Gain dB 23.5 25
Compression^[6]
25.5 27
25 26.5
P_-3dB
Output Power at 3dB Gain dB
27
28
27
Compression^[6]
OIP₃
Output Third Order Intercept dBm 27 29
Point;^[6]; ∆f = 2 MHz;
Pin = +2 dBm
29.5 32
29 32
RL_in
RL_out
Isolation
Input Return Loss^[5]
Output Return Loss^[5]
Min. Reverse Isolation
dB 11.5 13.5
11 13
11 13
dB 14 20
14 19
15 22
dB
47
48
46
Notes:
4.   Data measured in wafer form T_b = 25°C.
5.   100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.
6.   100% on-wafer test frequency = 17.7, 26.5 and 32 GHz.