AMGP-6434 Datasheet, PDF (2/9 Pages) AVAGO TECHNOLOGIES LIMITED – 28-31 GHz 4W SMT Packaged Power Amplifier

ELECTRICAL SPECIFICATIONS
Table 1. Absolute Minimum and Maximum ^[1] Ratings
Parameter
Specifications
Comments
Description
Pin
Min.
Max.
Unit
Drain Supply Voltage
V_d1
V_d2
6.5
V
Gate Supply Voltage
RF Input Power (P_in) ^[2]
V_g
-2
RFIN
0
V
24
dBm
CW
Power Dissipation (P_diss)
20
W
P_diss = V_d1 x I_d1 + V_d2 x I_d2 + P_in - P_out
MSL
MSL2
T_CH
150
°C
Channel Temperature
T_STG
-65
150
°C
Storage Temperature
Notes:
1. Operation of this device above any one of these maximum parameters may cause permanent damage
2. With the DC (typical bias) and RF applied to the device at board temperature T_b= 25° C
Table 2. Recommended Operating Range
Parameter
Description
Drain Supply Voltage
Gate Supply Voltage
Gate Current @ 17dBm Pin
Gate Current @ SS [-20dBm Pin]
Quiescent Drain Supply
Current (I_dq)
RF Output Power (P_out)
Frequency Range
Thermal Resistance, θ_ch-b
Base Plate Temperature
Pin
V_d1
V_d2
V_g
Ig
Ig
V_d1
V_d2
RFOUT
Specifications
Min.
Typical
6.0
-1
-0.68
600
800
36
28
4.5
-40
Max.
-0.35
1.2
650
31
+85
Unit
V
V
mA
uA
mA
dBm
GHz
°C/W
°C
Comments
I_dq = I_d1 + I_d2
CW
Channel to board
2