AMGP-6432 Datasheet, PDF (2/9 Pages) AVAGO TECHNOLOGIES LIMITED – 28-31 GHz 2W SMT Packaged Power Amplifier

ELECTRICAL SPECIFICATIONS
Table 1. Absolute Minimum and Maximum ^[1] Ratings
Parameter
Specifications
Comments
Description
Pin
Min.
Max.
Unit
Drain Supply Voltage
V_d1
V_d2
6.5
V
Gate Supply Voltage
RF Input Power (P_in) ^[2]
V_g
-2
RFIN
0
V
24
dBm
CW
Power Dissipation (P_diss)
10
W
P_diss = V_d1 x I_d1 + V_d2 x I_d2 + P_in - P_out
MSL
MSL2
T_CH
150
°C
Channel Temperature
T_STG
-65
150
°C
Storage Temperature
Notes:
1. Operation of this device above any one of these maximum parameters may cause permanent damage
2. With the DC (typical bias) and RF applied to the device at board temperature T_b= 25° C
Table 2. Recommended Operating Range
Parameter
Description
Drain Supply Voltage
Gate Supply Voltage
Maximum Gate Current
Pin
V_d1
V_d2
V_g
I_{g, max}
Specifications
Min.
Typical Max.
6.0
-1
-0.68
-0.6
-3
-2.5
Quiescent Drain Supply
Current (I_dq)
RF Output Power (P_out)
Frequency Range
Thermal Resistance, θ_ch-b
Base Plate Temperature
V_d1
V_d2
RFOUT
28
-40
300
400
33
31
7.6
+85
Unit
V
V
mA
mA
dBm
GHz
°C/W
°C
Comments
I_{g, max} occurs at highest
RF P_out condition.
I_dq = I_d1 + I_d2
CW
Channel to board
2