TO293BN-RXYZ Datasheet, PDF (1/6 Pages) AVAGO TECHNOLOGIES LIMITED – 1310 nm TO-Can Package for 10 Gb/s Applications

TO293BN-RXYZ
1310 nm TO-Can Package for 10 Gb/s Applications
Data Sheet
Description
The TO293BN-RXYZ is a hermetically-sealed device with a
photo diode for optical output monitoring. It incorporates
1310 nm single mode edge-emitting laser diode chips for
use in uncooled applications up to 10.7 Gb/s. The laser
is mounted into a Transistor Outline (TO) header and is
hermetically sealed with a lens cap specific to it. The laser
design is buried hetero structure with multi-quantum
well (MQW) active layers and distributed-feedback (DFB)
grating layer. All laser chips come from wafers that have
been certified using a representative lot of devices that
must achieve an acceptable yield for burn-in and other
multi-temperature, CW and dynamic tests.
Features
• Low threshold current
• High bandwidth
• Qualified as per intent of Telcordia GR-468
• Operating temperature -40 °C to 85 °C
Applications
• Supports performance up to 10.7 Gb/s bit rate
• LR1 SONET/SDH OC192/STM-64
• 10 Gb/s Gigabit Ethernet
• 10 Gb/s Fiber Channel