MGA-684P8 Datasheet, PDF (1/10 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise Active Bias Low Noise Amplifi er

MGA-684P8
Low Noise Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-684P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 m GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm³ 8-pin Quad-Flat-Non-Lead
(QFN) package. It is designed for optimum use from 1.5
GHz up to 4 GHz. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-684P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at lower frequency from 450 MHz up to 1.5
GHz, MGA-683P8 is recommended. Both MGA-683P8 and
MGA-684P8 share the same package and pinout configu-
ration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm³ 8-lead QFN
[1]
[8]
[8]
[1]
[2] _84X ^[7]
[3]
[6]
[7]
[6]
[2]
[3]
[4]
[5]
[5]
[4]
Top View
Pin 1 – Vbias
Pin 2 – RFinput
Pin 3 – Not Used
Pin 4 – Not Used
Bottom View
Pin 5 – Not Used
Pin 6 – Not Used
Pin 7 – RFoutput/Vdd
Pin 8 – Not Used
Centre tab - Ground
Note:
Package marking provides orientation and identification
“84” = Device Code, where X is the month code.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Features
 Low noise Figure
 High linearity performance
 GaAs E-pHEMT Technology^[1]
 Low cost small package size: 2.0 x 2.0 x 0.75 mm³
 Excellent uniformity in product specifications
 Tape-and-Reel packaging option available
Specifications
1.9 GHz; 5 V, 35 mA
 17.6 dB Gain
 0.56 dB Noise Figure
 21 dB Input Return Loss
 32.4 dBm Output IP3
 22 dBm Output Power at 1dB gain compression
Applications
 Low noise amplifier for cellular infrastructure for GSM
TDS-CDMA, and CDMA.
 Other low noise application.
 Repeater, Metrocell/Picocell application.
Simplified Schematic
Vdd
C5
Rbias
C6
C3
R1
R2
C4
L1
RFin
C1
[1]
[2]
[3]
L3
[4]
L2
[8] C2 RFout
[7]
[6]
[5]
Note:
 The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-684P8.
 Detail of the components needed for this product is shown in Table 1.
 Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
 Good RF practice requires all unused pins to be earthed.