MGA-638P8 Datasheet, PDF (1/14 Pages) AVAGO TECHNOLOGIES LIMITED – High Linearity Low Noise Amplifi er

MGA-638P8
High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-638P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). This LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 m GaAs
Enhancement-mode pHEMT process. It is housed in the
miniature 2.0 x 2.0 x 0.75 mm³ 8-pin Dual-Flat-Non-Lead
(DFN) package. The device is designed for optimum use
from 2.5 GHz up to 4.0 GHz. The compact footprint and
low profile coupled with low noise, high gain and high
linearity make this an ideal choice as a low noise amplifier
for cellular infrastructure applications such as LTE, GSM,
CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For optimum
performance at lower frequency from 450 MHz up to 1.5
GHz, MGA-636P8 is recommended. For optimum perfor-
mance from 1.5 GHz up to 2.5 GHz, MGA-637P8 is recom-
mended. All these 3 products, MGA-636P8, MGA-637P8
and MGA-638P8 share the same package and pinout con-
figuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm³ 8-lead DFN
[1]
[8]
[2] _38X ^[7]
[3]
[6]
[4]
[5]
[8]
[1]
[7]
[2]
[6]
GND
[3]
[5]
[4]
TOP VIEW
Pin 1 – Not Used
Pin 2 – RFinput
Pin 3 – Vbias2
Pin 4 – Not Used
Center paddle – GND
BOTTOM VIEW
Pin 5 – Vbias1
Pin 6 – PwrDwn
Pin 7 – RFoutput
Pin 8 – Not Used
Note:
Package marking provides orientation and identification
“38” = Product Code
“X” = Month Code
It is recommended to ground Pin1, 4 and 8 which are Not Used.
Features
 High linearity performance.
 Low Noise Figure.
 GaAs E-pHEMT Technology^[1].
 Low cost small package size.
 Integrated with active bias and option to access FET
gate.
 Integrated power down control pin.
Specifications
2.5 GHz; 4.8 V, 84 mA
 17.3 dB Gain
 0.87 dB Noise Figure
 14 dB Input Return Loss
 22.6 dBm Input IP3
 22.2 dBm Output Power at 1 dB gain compression
Applications
 Cellular infrastructure applications such as LTE, GSM,
CDMA, W-CDMA, CDMA2000 & TD-SCDMA.
 Other low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with con-
ventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 100 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.