MGA-635P8_15 Datasheet, PDF (1/14 Pages) AVAGO TECHNOLOGIES LIMITED – Ultra Low Noise, High Linearity Low Noise Amplifier

MGA-635P8
Ultra Low Noise, High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-635P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise and high linearity achieved through the use of
Avago Technologies’ proprietary 0.25mm GaAs Enhance-
ment-mode pHEMT process. It is housed in a miniature 2.0
x 2.0 x 0.75mm³ 8-pin Quad-Flat-Non-Lead (QFN) package.
It is designed for optimum use from 2.3GHz up to 4GHz.
The compact footprint and low profile coupled with low
noise, high gain and high linearity make the MGA-635P8
an ideal choice as a low noise amplifier for cellular infra-
structure for LTE, GSM and CDMA. For optimum perfor-
mance at lower frequency from 450MHz up to 1.5GHz,
MGA-633P8 is recommended. For optimum performance
at frequency from 1.5GHz up to 2.3GHz, MGA-634P8
is recommended. All these 3 products, MGA-633P8,
MGA-634P8 and MGA-635P8 share the same package and
pinout configuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm³ 8-lead QFN
[1]
[8]
[8]
[1]
[2] _35X ^[7]
[3]
[6]
[7]
[6]
[2]
[3]
[4]
[5]
[5]
[4]
Top View
Pin 1 – Vbias
Pin 2 – RFinput
Pin 3 – Not Used
Pin 4 – Not Used

Bottom View
Pin 5 – Not Used
Pin 6 – Not Used
Pin 7 – RFoutput/Vdd
Pin 8 – Not Used
Centre tab - Ground
Note:
Package marking provides orientation and identification
“35” = Device Code, where X is the month code.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Features
• Ultra Low noise Figure
• High linearity performance
• GaAs E-pHEMT Technology^[1]
• Low cost small package size: 2.0 x 2.0 x 0.75 mm³
• Excellent uniformity in product specifications
• Tape-and-Reel packaging option available
Specifications
2.5GHz; 5V, 56mA
• 18 dB Gain
• 0.56 dB Noise Figure
• 12.5 dB Input Return Loss
• 35.9 dBm Output IP3
• 22 dBm Output Power at 1dB gain compression
Applications
• Low noise amplifier for cellular infrastructure for LTE,
GSM and CDMA.
• Other ultra low noise application.
Simplified Schematic
Vdd
Rbias
C5
R1
R2
C6
C3
L1
C4
L2
RFin
C1
[1] _{bias [8]}
C2
[2]
[7]
[3]
[6]
[4]
[5]
RFout
Notes:
• The schematic is shown with the assumption that similar PCB is used
for all MGA-633P8, MGA-634P8 and MGA-635P8.
• Detail of the components needed for this product is shown in Table 1.
• Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
• Good RF practice requires all unused pins to be earthed.