MGA-425P8 Datasheet, PDF (1/15 Pages) List of Unclassifed Manufacturers – GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package

MGA-425P8
GaAs Enchancement-mode PHEMT
Power Amplifier in 2x2 mm² LPCC Package
Data Sheet
Description
Avago Technologies’s MGA-425P8 power amplifier is designed
for wireless application in the 2–10 GHz frequency range. The
PA has a high power ­efficiency (PAE) achieved through the
use of Avago Technologies’s proprietary GaAs Enhancement-
mode pHEMT process.
MGA-425P8 is housed in a ­miniature 2.0 x 2.0 x 0.75 mm 8‑lead
leadless-plastic-chip-carrier (LPCC) package. The compact foot-
print, low profile couple with the excellent thermal efficiency
of the LPCC package makes the MGA‑425P8 an ideal choice as
power amplifier that saves board space.
On-chip bias circuitry allows operation from a single +3.3V
power supply. The output of the amplifier is near to 50Ω (be-
low 2:1VSWR) around 4.9–5.8 GHz.This makes MGA-425P8 an
ideal choice as power amplifier for broadband IEEE 802.11a
system as well as other high performance wireless application
in the 2–10 GHz ­frequency range.
One external resistor (RBias) is used to set the bias ­current of
the device over a wide range.
This allows the designer to use the same part in several circuit
positions and tailor the output power/linearity ­performance,
and current consumption, to suit each ­position.
Pin Connections and Package Marking
2.0 x 2.0 x 0.75 mm 8-lead LPCC
Pin 1 (NC)
Pin 8 (NC)
Pin 2 (RFin)
Pin 3 (NC)
2YX
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 4 (NC)
Top View
Pin 5 (RBias)
Note:
Package marking provides orientation and identification
“2Y” = Device Code
“X” = Data code indicates the month of manufacture.
Pin 1 (NC)
Pin 2 (RFin)
Pin 3 (NC)
Pin 4 (NC)
GND
Pin 8 (NC)
Pin 7 (RFout, VD)
Pin 6 (NC)
Pin 5 (RBias)
Bottom View
Note:
Use Die Attach Padded for electrical grounding and thermal dissipa-
tion
Features
• Near 50Ω broadband output match
• Single +3.3V supply
• High Gain & OIP3
• Miniature 2 x 2 x 0.75 mm
LPCC package
• Pb-free & MSL-1 package
• Tape-and-Reel packaging
option available
Specifications @ 5.25 GHz, 3.3V, 58 mA (typ)
• 13.3 dBm Linear Pout @ 5% EVM
• 10.3% PAE @ +13.3 dBm Pout
• 12 dBm Linear Pout @ 3% EVM
• 7.6% PAE @ + 12 dBm Pout
• 47% PAE @ P1dB
• 20.3 dBm P1dB
• 32.9 dBm OIP3
• 16 dB Gain
• 1.7 dB NF
Attention: Observe precautions for
handling electrostatic ­sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Simplified Schematic
Rbias
Vbias
5
RFin
2
I bias
Bias
Vd
Id= Ids + Ibias
I ds
7
RFout, VD
1, 3, 4, 6, 8
(NC)