MGA-17516 Datasheet, PDF (1/16 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise, High Linearity Match Pair Low Noise Amplifier

MGA-17516
Low Noise, High Linearity Match Pair Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-17516 is an economical,
easy-to-use GaAs MMIC match pair Low Noise Amplifier
(LNA). The LNA has low noise and high linearity achieved
through the use of Avago Technologies’ proprietary
0.25um GaAs Enhancement-mode pHEMT process. It is
housed in a miniature 4.0 x 4.0 x 0.85mm³ 16-pin Quad-
Flat-Non-Lead (QFN) package. The compact footprint and
low profile coupled with low noise, high gain and high
linearity make the MGA-17516 an ideal choice as a low
noise amplifier for cellular infrastructure for GSM, CDMA
and TDS-CDMA applications. This device is applicable to
both Single and Balance mode. It is designed for optimum
use from 1.7GHz to 2.7GHz. For optimum performance at
lower frequency from 500MHz to 1.7GHz, the MGA-16516
is recommended. Both MGA-17516 and MGA-16516 share
the same package and pinout.
Pin Configuration and Package Marking
Pin 12
Pin 1
17516
Pin 11
Pin 2
YYWW
Pin 10
GND
Pin 3
XXXX
Pin 9
Pin 4
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“17516” = Device Code
“YYWW“= Year and Work Week
“XXXX” = Last 4 digit of Device Lot Number
Features
x 4.0 x 4.0 x 0.85 mm³ 16-lead QFN
x Low noise figure
x High linearity performance
x GaAs E-pHEMT Technology^[1]
x Low cost small package size: 4.0x4.0x0.85 mm³
x Excellent uniformity in product specifications
x Tape-and-Reel packaging option available
Specifications
1.85GHz; 5V, 50mA (typ) per section
x 17.4 dB Gain
x 0.46 dB Noise Figure
x 16.2 dBm Input IP3
x 21 dBm Output Power at 1dB gain compression
Applications
x Low noise amplifier for cellular infrastructure for GSM,
CDMA and TDS-CDMA.
x Other ultra low noise application.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.