MGA-13316_15 Datasheet, PDF (1/11 Pages) AVAGO TECHNOLOGIES LIMITED – High Gain, High Linearity Low Noise Amplifier

MGA-13316
High Gain, High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-13316 is a two stage, easy-to-
use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
low noise with good input return loss and high linearity
achieved through the use of Avago Technologies’ propri-
etary 0.25 Pm GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the
inter-stage between the two LNA.
It is designed for optimum use between 2.2 GHz to 4 GHz.
For optimum performance at lower frequency from
400 MHz to 1.5 GHz, MGA-13116 is recommended. For
optimum performance at frequency from 1.5 GHz to
2.5 GHz, the MGA-13216 is recommended. All these 3
products, MGA-13116, MGA-13216 and MGA-13316 share
the same package and pinout configuration.
Pin Configuration and Package Marking
4.0 x 4.0 x 0.85 mm³ 16-lead QFN
AVAGO
13316
YYWW
XXXX
Top View
Pin 2 Vbias
12
1 ^{Pin 3 RFin Q1}
11
GND
10
9
Pin 10 RFout Q2
2 _{Pin 11 RFout Q2}
3 ^{Pin 13 RFin Q2}
Pin 16 RFout Q1
4
All other pins
NC – Not Connected
Bottom View
Note:
Package marking provides orientation and identification
“13316” = Product Code
“YYWW” = Year and Work Week of Manufacture
“XXXX” = Lot Number
Features
x Low noise figure
x High gain
x High linearity performance
x Excellent isolation
x GaAs E-pHEMT Technology ^[1]
x Low cost small package size: 4.0 x 4.0 x 0.85 mm³
x Excellent uniformity in product specifications
x Meets MSL1, Lead-free and halogen free
Specifications
2.5 GHz; Q1: 5 V, 53 mA (typ) Q2: 5 V, 116 mA (typ)
x 0.76 dB Noise Figure
x 34.3 dB Gain
x 50.3 dB RFout Q1 to RFin Q2 Isolation
x 41.8 dBm Output IP3
x 23.5 dBm Output Power at 1dB gain compression
Applications
x Low noise amplifier for cellular infrastructure including
GSM, CDMA, TD-LTE, and W-CDMA.
x Other very low noise applications.
Simplified Schematic
Vdd1
C9b
R4b
C10
Vdd2
C5a
R2 _C7
C4
R3
L3
C8
C6 _R1
C3
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 600 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
L1
RFIN
C1
L4
16 15
1
2 _{Q1 bias}
14 13
12
11
3 Q1
4
56
Q2
10
9
78
L2
C2 RFOUT
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.