ATF-531P8 Datasheet, PDF (1/15 Pages) Agilent(Hewlett-Packard) – High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm LPCC Package

ATF-531P8
High Linearity Enhancement Mode^[1] ­Pseudomorphic HEMT
in 2x2 mm² LPCC^[3] ­Package
Data Sheet
Description
Avago Technologies’ ­­ATF‑531P8 is a single-voltage high
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC^[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
3Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
• Single voltage operation
• High linearity and gain
• Low noise figure
• Excellent uniformity in product specifications
• Small package size:
2.0 x 2.0 x 0.75 mm
• Point MTTF > 300 years^[2]
• MSL-1 and lead-free
• Tape-and-reel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
• 38 dBm output IP3
• 0.6 dB noise figure
• 20 dB gain
• 10.7 dB LFOM^[4]
• 24.5 dBm output power at 1 dB gain compression
Applications
• Front-end LNA Q1 and Q2 driver or pre-driver ampli‑
fier for Cellular/PCS and WCDMA wireless infrastruc‑
ture
• Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
plications
• General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive V_gs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.