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ATF-36077 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – 2-18 GHz Ultra Low Noise Pseudomorphic HEMT | |||
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ATF-36077
2â18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
AvagoTechnologies'ATF-36077isanultra-low-noisePseudoÂ
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input impedÂance match, making the design of
broadband low noise ampliÂfiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2â18 GHz frequency range.
77 Package
Features
⢠PHEMT Technology
⢠Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
⢠High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
⢠Low ParaÂsitic Ceramic Microstrip Package
⢠Tape-and-Reel Packing Option Available
Applications
⢠12 GHz DBS LNB (Low Noise Block)
⢠4 GHz TVRO LNB (Low Noise Block)
⢠Ultra-Sensitive Low Noise Amplifiers
25
20
Ga
1.2
15
Pin Configuration
4 SOURCE
1
3
GATE
DRAIN
2 SOURCE
0.8
10
NF[1]
0.4
0
0
4
8
12 16 20
FREQUENCY (GHz)
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for VDS = 1.5âV, ID = 10 mA.
ATF-36077 fig 1
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Note: 1. See Noise Parameter Table.
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