ATF-36077-TR1 Datasheet, PDF (1/4 Pages) AVAGO TECHNOLOGIES LIMITED – 2–18 GHz Ultra Low Noise Pseudomorphic HEMT

ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo­
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input imped­ance match, making the design of
broadband low noise ampli­fiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2‑18 GHz frequency range.
77 Package
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
• High Associated Gain:
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
• Low Para­sitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
25
20
Ga
1.2
15
Pin Configuration
4 SOURCE
1
3
GATE
DRAIN
2 SOURCE
0.8
10
NF^[1]
0.4
0
0
4
8
12 16 20
FREQUENCY (GHz)
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for V_DS = 1.5 V, I_D = 10 mA.
ATF-36077 fig 1
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Note: 1. See Noise Parameter Table.