ALM-12224 Datasheet, PDF (1/12 Pages) AVAGO TECHNOLOGIES LIMITED – 50 Watt High Power SPDT Switch with LNA Module

ALM-12224
2.30 GHz – 2.40 GHz
50 Watt High Power SPDT Switch with LNA Module
Data Sheet
Description
Avago Technologies’ ALM-12224 is a multi-chip integrated
module that comprise of a 50 Watt CW high power SPDT
switch, 1^st stage low noise amplifier and 2^nd stage high
gain driver amplifier through the use of Avago Tech-
nologies’ proprietary 0.25um GaAs Enhancement-mode
pHEMT process and low distortion silicon PIN diode
technologies.
The ALM-12224 is housed in a compact 8.0 x 8.0 x 1.2 mm³
molded-chips-on-board (MCOB) module package with 24
pin configuration pads, offering significant PCB space saving
as compare to conventional discrete design approach.
The device offers high power protection switch (Tx mode
operation) with very low insertion loss. During Rx mode
operation, the receiver chain provides a very low NF and
high gain that makes it an ideal choice for cellular infra-
structure in TD-LTE applications.
Component Image
Package Size : 8.0 x 8.0 x 1.2 mm³
AVAGO
12224
WWYY
XXXX
Gnd
Gnd
Gnd
Gnd
Gnd
Rx Out
Gnd
Vbias Vc 1 Gnd Gnd Gnd Tx
Pin 1
Ant
Gnd
Gnd
Vc 2
Vg
Vdd1
LNA2 Gnd Gnd Gnd Gnd LNA1
_In
_Out
TOP VIEW
BOTTOM VIEW
Note:
Package marking provides orientation and identification
“12224” = Device Part Number
“WWYY” = Work week and year of manufacture
“XXXX” = Last 4 digit of lot number
Notes:
1. Enhancement mode technology employs positive Vgs, thereby elimi-
nating the need of negative gate voltage associated with conven-
tional depletion mode devices.
Features
 Very Low Noise Figure
 High Power Switch design
 50 dB isolation between LNA1_Out and LNA2_In
 Small package size 8.0 x 8.0 x 1.2 mm³
 GaAs E-pHEMT Technology ^[1]
 Low Distortion Silicon PIN Diode Technology
 MSL 2a and Lead-free
Specifications
Typical Performance at 2.40 GHz (Rx mode)
 36.8 dB Gain
 0.99 dB Noise Figure
 38.5 dBm Output IP3
Typical Performance at 2.40 GHz (Tx mode)
 0.40 dB insertion loss
Applications
 High power switch LNA module for TD-LTE base station
front-end RF application.
Block Diagram with Simplified Schematic
Vc1 Vbias Vdd2
External
50 ohm
termination
Tx
C2
C6
C10
C7
Ant
C1
Vc2
PA
Vg
R1
C9
Vdd1 _C3
Switch bias
circuitry
C8
L1
C5
Rx Out
C4
LNA1_Out LNA2_In