AS8E128K32 Datasheet, PDF (6/13 Pages) Austin Semiconductor – 128K x 32 EEPROM Memory Array

Austin Semiconductor, Inc.
EEPROM
AS8E128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55^oC < T_A < +125^oC; Vcc = 5V +10%)
Symbol
Parameter
Min
Max
Units
t_WC
t_AS
t_AH
t_DS
t_DH
t_WP
t_BLC
t_WPH
Write Cyce Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
10
ms
4
ns
50
ns
50
ns
10
ns
100
ns
150
µs
50
ns
t^tOOEESS
OE\
ADDRESS
WE\
CE\
t_tAASS
t_tCCSS
DQ
WRITE CYCLE NO 1.
(Chip Enable Controlled)
t
tA^AH^H
ADDRESS VALID
t^tWWCC
t^tW^WP^P
t^tD^DS
DATA VALID
t^tO^OE^EHH
t^tCCHH
t^tW^WP^PHH
t^tD^DH^H
OE\
ADDRESS
CE\
WE\
t^tO_OEE_SS
t_tAASS
t_tCCSS
DQ
AS8E128K32
Rev. 5.5 9/01
WRITE CYCLE NO 2.
(Write Enable Controlled)
tO^tOEEHH
t_tAAHH
ttW_WPP
6
t^tC_CHH
t^tW_WP_PHH
t^tD_DSS
t_tDDHH
DATA VALID
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