AS28C010 Datasheet, PDF (6/14 Pages) Austin Semiconductor – 128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable

Austin Semiconductor, Inc.
EEPROM
AS28C010
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55oC < T < 125oC; Vcc = 5V +10%)
C
Test Conditions
z Input Pulse Levels:
0.0V to 3.0V
z Input rise and fall times:
< 20ns
z Output Load:
1 TTL Gate +100pF (including scope and jig)
z Reference levels for measuring timing: 1.5V,1.5V
Symbol
Parameter
t_RC
t_CE
t_AA
t_OE
t_LZ(3)
t_OLZ(3)
t_HZ(3)
t_OHZ(3)
t_OH
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE\ LOW to Active Output
OE\ LOW to Active Output
CE\ HIGH to High Z Output
OE\ HIGH to High Z Output
Output Hold from Address Change
-12
-15
MIN MAX MIN MAX
120
150
120
150
120
150
50
50
0
0
0
0
50
50
50
50
0
0
-20
MIN MAX
200
200
200
50
0
0
50
50
0
-25
UNITS
MIN MAX
250
ns
250 ns
250 ns
50 ns
0
ns
0
ns
50 ns
50 ns
0
ns
Notes: 3) t min., t min., and t are periodically sampled and not 100% tested. t max. and t max. are measured,
LZ
OLZ
OHZ
HZ
OHZ
with C_L=5pF, from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the
outputs are no longer driven.
AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
SYMBOL
t_WC
t_AS
t_AH
tcs
t_CH
t_CW
t_OES
t_OEH
t_WP
t_WPH
t_DV
t_DS
t_DH
t_DW
t_BLC
PARAMETER
Write Cycle Time
Address Setup Time
Address Hold Time
Write Setup Time
Write Hold Time
CE\ Pulse Width
OE\ HIGH Setup Time
OE\ HIGH Hold Time
WE\ Pulse Width
WE\ HIGH Recovery
Data Valid
Data Setup
Data Hold
Delay to Next Write
Byte Load Cycle
MIN MAX UNITS
10
ms
0
ns
50
ns
0
ns
0
ns
100
ns
10
ns
10
ns
100
ns
100
ns
1
Ps
50
ns
0
ns
10
Ps
0.20
100
Ps
AS28C010
Rev. 1.5 5/06
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6