AS29F010 Datasheet, PDF (15/26 Pages) Alliance Semiconductor Corporation – 5V 128K x 8 CMOS FLASH EEPROM

Austin Semiconductor, Inc.
FLASH
AS29F010
FIGURE 8: AC CHARACTERISTICS, Read Operations Timings
AC CHARACTERISTICS: Erase and Program Operations
PARAMETER
Write Cycle Time¹
SYMBOL
JEDEC Std
MIN t_AVAV t_WC
SPEED OPTIONS
-50 -60 -70 90 -120 -150 UNITS
50 60 70 90 120 150 ns
Address Setup Time
MIN t_AVWL t_AS
0
ns
Address Hold Time
MIN t_WLAX t_AH 40 45 45 45 50 50 ns
Data Setup Time
MIN t_DVWH t_DS 25 30 30 45 50 50 ns
Data Hold Time
MIN t_WHDX t_DH
0
ns
Output Enable Setup Time
MIN
t_OES
0
ns
Read Recover Time Before Write
(OE\ High to WE\ Low)
MIN t_GHWL t_GHWL
0
ns
CE\ Setup Time
MIN t_ELWL t_CS
0
ns
CE\ Hold Time
MIN t_WHEH t_CH
0
ns
Write Pulse Width
MIN t_WLWH t_WP 25 30 35 45 50 50 ns
Write Pulse Width High
MIN t_WHWL t_WPH
20
ns
Byte Programming Operation²
MIN t_WHWH1 t_WHWH1
14
µs
Chip/Sector Erase Operation²
MAX t_WHWH2 t_WHWH2
15
sec
V_CC Set Up Time¹
MIN
t_VCS
50
µs
NOTES:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
AS29F010
Rev. 2.3 12/08
15
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