1N4728A Datasheet, PDF (15/64 Pages) Motorola, Inc – One Watt Hermetically Sealed Glass Silicon Zener Diodes

Austin Semiconductor, Inc.
COTS PEM
SDRAM
AS4DDR32M16
FIGURE 11: CONSECUTIVE READ BURSTS
NOTES:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal tAC, tDQSCK, and tDQSQ.
6. Example applies only when READ commands are issued to same device.
AS4DDR32M16
Rev. 1.5 06/06
15
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