AS5SP1M18DQ Datasheet, PDF (1/10 Pages) Austin Semiconductor – Plastic Encapsulated Microcircuit 18Mb, 1M x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect

Austin Semiconductor, Inc.
COTS PEM
AS5SP1M18DQ
SSRAM
Plastic Encapsulated Microcircuit
18Mb, 1M x 18, Synchronous SRAM
Pipeline Burst, Single Cycle Deselect
Features
NC
1
NC
2
NC
3
VDDQ
4
• Synchronous Operation in relation to the input Clock
• 2 Stage Registers resulting in Pipeline operation
• On chip address counter (base +3) for Burst operations
• Self-Timed Write Cycles
• On-Chip Address and Control Registers
• Byte Write support
• Global Write support
VSSQ
5
NC
6
NC
7
DQb
8
DQb
9
VSSQ
10
VDDQ
11
DQb
12
DQb
13
NC
14
• On-Chip low power mode [powerdown] via ZZ pin
• Interleaved or Linear Burst support via Mode pin
VDD
15
NC
16
VSS
17
• Three Chip Enables for ease of depth expansion without Data ^DQb
18
DQb
19
Contention.
VDDQ
20
• Two Cycle load, Single Cycle Deselect
• Asynchronous Output Enable (OE\)
VSSQ
21
DQb
22
DQb
23
• Three Pin Burst Control (ADSP\, ADSC\, ADV\)
• 3.3V Core Power Supply
DQPb
24
NC
25
VSSQ
26
• 3.3V/2.5V IO Power Supply
• JEDEC Standard 100 pin TQFP Package, MS026-D/BHA
VDDQ
27
NC
28
NC
29
• Available in Industrial, Enhanced, and Mil-Temperature
NC
30
Operating Ranges
SSRAM [SPB]
80
A
79
NC
78
NC
77
VDDQ
76
VSSQ
75
NC
74
DQPa
73
DQa
72
DQa
71
VSSQ
70
VDDQ
69
DQa
68
DQa
67
VSS
66
NC
65
VDD
64
ZZ
63
DQa
62
DQa
61
VDDQ
60
VSSQ
59
DQa
58
DQa
57
NC
56
NC
55
VSSQ
54
VDDQ
53
NC
52
NC
51
NC
Fast Access Times
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
tCYC
tCD
tOE
200Mhz
5.0
3.0
3.0
166Mhz
6.0
3.5
3.5
133Mhz
7.5
4.0
4.0
Units
ns
ns
ns
Block Diagram
OE\
ZZ
CLK
CE1\
CE2
CE3\
BWE\
BWx\
GW\
ADV
ADSC\
ADSP\
MODE
A0-Ax
CONTROL
BLOCK
BURST CNTL.
Address
Registers
Row
Decode
Column
Decode
General Description
I/O Gating and Control
Memory Array
x18
SBP
❑ Synchronous Pipeline
Burst
❋ Two (2) cycle load
❋ One (1) cycle
de-select
❋ One (1) cycle latency
on Mode change
Output Output
Register Driver
Input
Register
ASI’s AS5SP1M18DQ is a 18Mb High Performance Synchronous
Pipeline Burst SRAM, available in multiple temperature screening
levels, fabricated using High Performance CMOS technology and
is organized as a 1M x 18. It integrates address and control
registers, a two (2) bit burst address counter supporting four (4)
double-word transfers. Writes are internally self-timed and
synchronous to the rising edge of clock.
ASI’s AS5SP1M18DQ includes advanced control options
including Global Write, Byte Write as well as an Asynchronous
DQx, DQPx _{Output enable. Burst Cycle controls are handled by three (3)}
input pins, ADV, ADSP\ and ADSC\. Burst operation can be
initiated with either the Address Status Processor (ADSP\) or
Address Status Cache controller (ADSC\) inputs. Subsequent
burst addresses are generated internally in the system’s burst
sequence control block and are controlled by Address Advance
(ADV) control input.
AS5SP1M18DQ
Revision 1.0 04/04/04
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
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