AS5C1008_05 Datasheet, PDF (1/9 Pages) Austin Semiconductor – 128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM

Austin Semiconductor, Inc.
SRAM
AS5C1008
128K x 8 SRAM
RUGGEDIZED PLASTIC
HIGH SPEED SRAM
FEATURES
• Access times of 15, 20 and 25 ns
• Fast output enable (t ) for cache applications
AOE
• Low active power
• Low standby power
• Fully static operation, no clock or refresh required
• TTL Compatible Inputs and Outputs
• Single +5V power supply
• Package in Industry-standard 32-pin SOJ
OPTIONS
• Timing
15ns access
20ns access
25ns access
MARKING
-15
-20
-25
• Package
Plastic SOJ*
DJ No. 905
• Operating Temperature Ranges
-Military (-55^oC to +125^oC)
XT
-Industrial (-40^oC to +85^oC)
IT
GENERAL DESCRIPTION
The ASI AS5C1008 is a high speed, low power, 128K by
8-bit ruggedized plastic (COTS) CMOS Static RAM. It is fabri-
cated using high performance, CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 15ns (Max) over the
military and industrial temperature ranges.
When Chip Enable (CE\) is HIGH, the device assumes a
standby mode at which the power dissipation can be reduced
down to 125mW (max) at CMOS input levels.
Easy memory expansion is provided by using asserted LOW
CE\ and asserted HIGH CE2, and asserted LOW write enable
(WE\) controls both writing and reading of the memory.
TheAS5C1008 is pin-compatible with other 128K x 8
SRAM's in the SOJ package.
*For ceramic versions of this product, please see the
MT5C1008 datasheet.
AS5C1008
Rev. 3.6 6/05
1
PIN ASSIGNMENT
(Top View)
32-Pin Plastic SOJ (DJ)
NC 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
A16 9
A15 10
A14 11
A13 12
I/O0 13
I/O1 14
I/02 15
Vss 1 6
3 2 Vcc
31 A7
3 0 CE₂
29 WE\
28 A8
27 A9
26 A10
25 A11
24 OE\
23 A12
2 2 CE\₁
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
PIN FUNCTIONS
A0 - A16 Address Inputs
WE\
Write Enable
CE\₁, CE₂ Chip Enable
OE\
Output Enable
I/O₀ - I/O₇ Data Inputs/Outputs
V_CC
Power
V_SS
Ground
NC
No Connection
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www.austinsemiconductor.com
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