AS4SD4M16_05 Datasheet, PDF (1/50 Pages) Austin Semiconductor – 4 Meg x 16 SDRAM Synchronous DRAM Memory

Austin Semiconductor, Inc.
SDRAM
AS4SD4M16
4 Meg x 16 SDRAM
Synchronous DRAM Memory
FEATURES
• Extended Testing Over -55°C to +125° C and
Industrial Temp -40°C to 85° C
• WRITE Recovery ( t_WR/ t_DPL) t_WR = 2 CLK
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8 or full page
• Auto Precharge and Auto Refresh Modes
• Self Refresh Mode (Industrial, -40°C to 85° C only)
• 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
• Longer lead TSOP for improved reliability
(OCPL*)
• Short Flow / Long Flow Test Screening Options
OPTIONS
MARKING
• Configurations
4 Meg x 16 (1 Meg x 16 x 4 banks)
4M16
• Plastic Package - OCPL*
54-pin TSOP (400 mil)
DG No. 901
• Timing (Cycle Time)
8ns; t_AC = 6.5ns @ CL = 3 ( t_RP - 24ns) -8
10ns; t_AC = 9ns @ CL = 2
-10
• Operating Temperature Ranges
-Military (-55°C to +125° C)
XT
-Industrial Temp (-40°C to 85° C)
IT
KEY TIMING PARAMETERS
SPEED
GRADE
-8
-10
-8
-10
CLOCK
ACCESS TIME
FREQUENCY CL = 2** CL = 3**
125 MHz
–
6.5ns
100 MHz
–
7ns
83 MHz
9ns
–
66 MHz
9ns
–
SETUP
TIME
2ns
3ns
2ns
3ns
*Off-center parting line
**CL = CAS (READ) latency
HOLD
TIME
1ns
1ns
1ns
1ns
PIN ASSIGNMENT
(Top View)
54-Pin TSOP
Note: “\” indicates an active low.
4 Meg x 16
Configuration
1 Meg x 16 x 4 banks
Refresh Count
4K
Row Addressing
4K (A0-A11)
Bank Addressing
4 (BA0, BA1)
Column Addressing
256 (A0-A7)
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS4SD4M16
Rev. 2.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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