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AS4DDR32M72PBG1 Datasheet, PDF (1/18 Pages) Austin Semiconductor – 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
iPEM
2.4Gb SDRAM-DDR
Austin Semiconductor, Inc. AS4DDR32M72PBG1
32Mx72 DDR SDRAM
iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
„ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps
„ Package:
• 208 Plastic Ball Grid Array (PBGA), 16 x 23mm-1.0mm pitch
„ 2.5V ±0.2V core power supply
„ 2.5V I/O (SSTL_2 compatible)
„ Differential clock inputs (CLK and CLK#)
„ Commands entered on each positive CLK edge
„ Internal pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
„ Programmable Burst length: 2,4 or 8
„ Bidirectional data strobe (DQS) transmitted/received
with data, i.e., source-synchronous data capture
(one per byte)
„ DQS edge-aligned with data for READs; center-aligned
with data for WRITEs
„ DLL to align DQ and DQS transitions with CLK
„ Four internal banks for concurrent operation
„ Two data mask (DM) pins for masking write data
„ Programmable IOL/IOH option
„ Auto precharge option
„ Auto Refresh and Self Refresh Modes
„ Industrial, Enhanced and Military Temperature
Ranges
„ Organized as 32M x 72/80
„ Weight: AS4DDR32M72PBG </= 2.0 grams typical
* This product and or it’s specifications is subject to change without notice.
BENEFITS
„ 40 - 70% SPACE SAVINGS
„ Reduced part count
„ Reduced I/O count
• 34% I/O Reduction
„ Reduced trace lengths for lower parasitic
capacitance
„ Suitable for hi-reliability applications
„ Laminate interposer for optimum TCE match
„ PIN/Function compatible to White
W3E32M72S-xSBx
ConfigurationAddressing
Parameter
Configuration
RefreshCount
RowAddress
BankAddress
ColumnAddress
32Megx72
8Megx16x4Banks
8K
8K(A0ͲA12)
4(BA0ͲBA1)
1K(A0ͲA9)
FUNCTIONAL BLOCK DIAGRAM
CLK0
CLK0\
CKE0
CS0
WE0\
RAS0\
CAS0\
DQML0
DQMH 0
DQSL0
DQSH 0
SD R AM
DDR
x16
2.5V Core
2.5V I/O
CLK1
CLK1\
CKE1
DQ0-15 CS0
WE1\
RAS1\
CAS1\
DQML1
DQMH 1
DQSL1
D QSH 1
SD R AM
DDR
x 16
2.5V Core
2.5V I/O
VRef
VCC
VCCQ
VSS
Ax,BA0-1
CLK2
CLK2\
CKE2
CS2
WE2\
RAS2\
CAS2\
DQML2
DQMH 2
DQSL2
DQSH 2
SD R AM
DDR
x16
2.5V Cor e
2.5V I/O
AS4DDR32M72PBG1
Rev. 0.1 06/09
CLK3
CLK3\
CKE3
DQ32-47CS3
WE3\
RAS3\
CAS3\
DQML3
DQMH 3
DQSL3
D QSH 3
SD R AM
DDR
x16
2.5V Core
2.5V I/O
CLK4
CLK4\
CKE4
DQ16-31CS4
WE4\
RAS4\
CAS4\
DQML4
DQMH 4
DQSL4
DQSH 4
SD R AM
DDR
x16
2.5V Core
2.5V I/O
DQ64-79
DQ48-63
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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