AS4DDR264M65PBG1 Datasheet, PDF (1/28 Pages) Austin Semiconductor – 64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit

iPEM
4.2 Gb SDRAM-DDR2
Austin Semiconductor, Inc. AS4DDR264M65PBG1
64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS
iNTEGRATED Plastic Encapsulated Microcircuit
FEATURES
„ DDR2 Data rate = 667, 533, 400
„ Available in Industrial, Enhanced and Extended Temp
„ Package:
• Proprietary Enchanced Die Stacked iPEM
• 208 Plastic Ball Grid Array (PBGA), 16 x 23mm
• 1.00mm ball pitch
„ Differential data strobe (DQS, DQS#) per byte
„ Internal, pipelined, double data rate architecture
„ 4n-bit prefetch architecture
„ DLL for alignment of DQ and DQS transitions with
clock signal
„ Eightinternal banks for concurrent operation
(Per DDR2 SDRAM Die)
„ Programmable Burst lengths: 4 or 8
„ Auto Refresh and Self Refresh Modes (I/T Version)
„ On Die Termination (ODT)
„ Adjustable data – output drive strength
„ 1.8V ±0.1V common core power and I/O supply
„ Programmable CAS latency: 3, 4, 5, 6 or 7
„ Posted CAS additive latency: 0, 1, 2, 3, 4 or 5
„ Write latency = Read latency - 1* tCK
„ Organized as 64M x 64
„ Weight: AS4DDR264M64PBG1 ~ 2.0 grams typical
NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only
BENEFITS
„ 58% Space Savings
„ 49% I/O reduction vs Individual CSP approach
„ Reduced part count
„ Reduced trace lengths for lower parasitic
capacitance
„ Suitable for hi-reliability applications
„ Upgradable to 128M x 64 density in future
„ Pin / Function equivalent to White
W3H64M64E-xSBx
FUNCTIONAL BLOCK DIAGRAM
Ax, BA0-2
ODT
VRef
VCC
VSS
CSa\
WEa\
RASa\
CASa\
CKEa\
ODT
UDMx, LDMx
UDSQx,UDSQx\
LDSQx, LDSQx\
CKx,CKx\
A
VCCQ
VSSQ
VCCL
VSSDL
A
2
2
2
2
DQ0-15 B
AS4DDR264M65PBG1
Rev. 0.5 06/08
VCCQ
VCCQ
VSSQ
VCCL
VSSQ
VCCL
VSSDL
B
VSSDL
C
2
2
2
CSb\
WEb\
RASb\
CASb\
CKEb\
2
2
2
2
2
VCCQ
VSSQ
VCCL
VSSDL
D
2
2
2
2
DQ16-31 C
DQ32-47 D
1
DQ48-63
Austin Semiconductor, Inc. ● Austin, Texas ● 512.339.1188 ● www.austinsemiconductor.com