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| STK64X50LM Datasheet, PDF (3/8 Pages) AUK corp – Advanced Power MOSFET | |||
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STK64X50LM
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
â£
Forward transfer admittance â£
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
ID=250μA, VGS=0
ID=250μA, VDS= VGS
VDS=500V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=0.32A
VDS=10V, ID=0.32A
VGS=0V, VDS=25V, f=1MHz
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=250V, VGS=10V
ID=0.64A, RG=25â¦
â¢â£
VDD=250V, VGS=10V
ID=0.64A
â¢â£
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.1
1.4
268
13
6.5
8.5
10.2
19
10.2
8.5
1.7
3.0
(Ta=25°C)
Max. Unit
-
V
5.0
V
1
μA
±100 nA
3.4
Ω
-
S
402
19.5 pF
9.8
-
-
ns
-
-
12.8
2.6
nC
4.5
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Continuous source current
Source current (Pulsed)
â
IS
Integral reverse diode
ISP
in the MOSFET
Forward voltage
â£
VSD
VGS=0V, IS=0.32A
Reverse recovery time
Reverse recovery charge
trr
Is=0.64A, VGS=0V
Qrr
dis/dt=100A/us
Note ;
â Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
â¡ L=20mH, IAS=0.64A, VDD=50V, RG=25â¦
⢠Pulse Test : Pulse Widthï¼ 300us, Duty cycle⤠2%
⣠Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
200
0.7
(Ta=25°C)
Max Unit
0.6
A
2.4
1.2
V
-
ns
-
uC
KSD-T0H015-000
3
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