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THN6201S Datasheet, PDF (2/13 Pages) Tachyonics CO,. LTD – NPN Planer RF TRANSISTOR
THN6201 Series
□ Electrical Characteristics ( TA = 25 ℃ )
Symbol
Parameter
Test Condition
ICBO Collector Cut-off Current
VCB = 19 V, IE = 0 mA
ICEO
VCE = 12 V, IB = 0 mA
IEBO Emitter Cut-off Current
VEB = 1 V, IC = 0 mA
hFE DC Current Gain
VCE = 3 V, IC = 15 mA
fT
Transition Frequency
VCE = 3 V, IC = 15 mA
CCB Collector to Base Capacitance VCB = 10 V, f = 1 MHz
Value
Min. Typ. Max. Unit
-
- 0.5 uA
-
-
5 uA
-
- 0.5 uA
80 200 300
- 12 - GHz
- 0.47 - pF
VCE = 3 V, IC = 5 mA, f = 1 GHz 11.5 13.5 -
|S21|2 Insertion Power Gain
VCE = 3 V, IC = 15 mA, f = 1 GHz 13 15
-
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz 6
8
-
VCE = 3 V, IC = 15 mA, f = 2 GHz 7.5 9.5 -
VCE = 3 V, IC = 5 mA, f = 1 GHz 15 17
-
MAG Maximum Available Gain
VCE = 3 V, IC = 15 mA, f = 1 GHz 16.5 18.5 -
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz 10 12
-
VCE = 3 V, IC = 15 mA, f = 2 GHz 11 13
-
NFmin Minimum Noise Figure
VCE = 3 V, IC = 5 mA, f = 1 GHz - 1.1 -
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz - 1.5 -
rn Noise Resistance
VCE = 3 V, IC = 5 mA, f = 1 GHz - 0.12 -
Ω
VCE = 3 V, IC = 5 mA, f = 2 GHz - 0.06 -
VCE = 3 V, IC = 5 mA, f = 1 GHz 12.5 14.5 -
GA Associated Gain
VCE = 3 V, IC = 15 mA, f = 1 GHz 14 16
-
dB
VCE = 3 V, IC = 5 mA, f = 2 GHz 8
10
-
VCE = 3 V, IC = 15 mA, f = 2 GHz 9
11
-
VCE = 3 V, IC = 15 mA, f = 1 GHz
P1dB, IN Input 1dB Compression Point
- 10 - dBm
(ZS = ZSopt, ZL = ZLopt)
2