SUT495J Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial Planar type NPN Silicon Transistor

Absolute maximum ratings (Tr1, Tr2 : NPN)
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
60
50
5
150
150
150
-55~150
SUT495J
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics(Tr1,Tr2 : NPN)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=100µA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10µA, I_C=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=2mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
Min.
60
50
5
-
-
70
-
Typ.
-
-
-
-
-
-
-
Ta=25°C
Max. Unit
-
V
-
V
-
V
0.1
µA
0.1
µA
700
-
0.25
V
80
-
-
MHz
-
2
3.5
pF
KST-6037-000
2