SUT480H Datasheet, PDF (2/4 Pages) AUK corp – Epitaxial planar type NPN Silicon Transistor

SUT480H
Absolute maximum ratings(Tr1, Tr2)
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
60
50
5
150
150
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics(Tr1, Tr2)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=100µA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10µA, I_C=0
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=2mA
Collector-Emitter saturation voltage V_CE(sat) I_C=100mA, I_B=10mA
Transistion frequency
f_T
V_CE=10V, I_C=1mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
60
-
-
V
50
-
-
V
5
-
-
V
-
-
0.1
µA
-
-
0.1
µA
70
-
700
-
-
-
0.25
V
80
-
-
MHz
-
2
3.5
pF
KST-5001-004
2